2002/11/20 by S. Baskoutas, Sotirios Baskoutas, Baskoutas, S. +3
Engineering · Physics and Astronomy · #Electromagnetic Simulation and Numerical Methods #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0211445
19 pages, 5 figures
arxiv created 2002/11/20 · openalex publication_date 2002/11/20 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The donor binding energies associated with the ground state and a few excited states, are computed as a function of the dot size and the impurity position within two and three dimensional GaAs quantum dots. The calculation has been done using the Potential Morphing Method - a recently developed numerical method for the solution of time independent Schroedinger equation. The agreement with both perturbation and variational methods is very good, as regards the dependence of the binding energies on the dot size as well as on the location of the impurity within the quantum dot. Finally, we have shown that this method works well in all confinement limits - from weak to strong confinement.