The Growth of Interaction Cross-Section of 4.3 GeV Electrons in Excited Crystals

2001/05/11 by A. Aganyants, A.O. Agan'yants, Aganyants, A.
Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #High Energy Physics - Experiment (hep-ex) #Semiconductor Quantum Structures and Devices #hep-ex

paper · pdf · doi:10.48550/arxiv.hep-ex/0105020

5 pages, 3 tables

openalex publication_date 2001/05/11 · arxiv created 2001/05/22 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The microscopic properties of the interactions of relativistic electrons were observed to alter when macro-conditions, such as the crystal vacuum, were changed. A qualitative explanation of the phenomenon is given.

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