2017/05/18 by William Y. Hsu, Amritesh Rai, Hsu, William +9
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Nanowire Synthesis and Applications #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1705.06733
openalex publication_date 2017/05/18 · openalex created_date 2017/06/05 · openalex updated_date 2026/07/28
The phosphorous activation in Ge n+/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400μs. The reverse junction leakage is found to strongly depend on the abruptness of dopant profiles. A shallow and abrupt junction is shown to have lower phosphorous activation level, due to surface dose loss, and higher band-to-band tunneling (BTBT) leakage, when compared to the deep junction. Simulations were carried out to evaluate the lowest achievable OFF-state currents (IOFF) for Ge double-gate FETs when using such an abrupt junction. Our results indicate that a Ge body thickness smaller than 5 nm is required to suppress the BTBT leakage and meet the requirement for the high performance devices defined by the International Technology Roadmap for Semiconductors (IOFF = 10-7 A/μm).