Capacitance-Voltage (C-V) Characterization of Graphene-Silicon\n Heterojunction Photodiodes

2020/02/25 by Sarah Riazimehr, Riazimehr, Sarah, Melkamu Belete +7
Materials Science · Physics and Astronomy · #2D Materials and Applications #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and interfaces

paper · pdf · doi:10.48550/arxiv.2002.10763

openalex publication_date 2020/02/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials\nform efficient devices for utilizing the properties of both classes of\nmaterials. Graphene/silicon (G/Si) Schottky diodes have been studied\nextensively with respect to their optoelectronic properties. Here, we introduce\na method to analyze measured capacitance-voltage data of G/Si Schottky diodes\nconnected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also\ndemonstrate the accurate extraction of the built-in potential (\Φ_bi)\nand the Schottky barrier height from the measurement data independent of the\nRichardson constant.\n

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