Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals

2007/07/06 by T. Slupinski, Slupinski, T., J. Caban +3
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0707.0968

9 pages, 2 figures, Proc. of 35th International School on the Physics of Semiconducting Compounds, Jaszowiec 2007, Poland, to appear in Acta Physica Polonica A (2007)

arxiv created 2007/07/06 · arxiv updated 2009/12/01

Abstract

We report on simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ~0.3 at.% as a clear metallic behaviour. The results show interesting situation that the Metal-Insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.

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