2025/10/02 by Wu, Jintong, Shao, Zhuang, Zhao, Junlei +5
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2510.01827
Silicon carbide (SiC) polymorphs are widely employed as nuclear materials, mechanical components, and wide-bandgap semiconductors. The rapid advancement of SiC-based applications has been complemented by computational modeling studies, including both ab initio and classical atomistic approaches. In this work, we develop a computationally efficient and general-purpose machine-learned interatomic potential (ML-IAP) capable of multimillion-atom molecular dynamics simulations over microsecond timescales. Using the ML-IAP, we systematically map the comprehensive pressure-temperature phase diagram and the threshold displacement energy distributions for the 2H and 3C polymorphs. Furthermore, collision cascade simulations provide in-depth insights into polymorph-dependent primary radiation damage clustering, a phenomenon that conventional empirical potentials fail to accurately capture.