2025/09/13 by San‐Dong Guo, Junjie He, Guo, San-Dong +3 · 1 citation
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci)
paper · pdf · doi:10.48550/arxiv.2509.10768
openalex publication_date 2025/09/13 · openalex created_date 2025/10/12 · openalex updated_date 2026/07/28
In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and spin ordering, have been proposed to achieve fully-compensated ferrimagnetism, these approaches either face experimental difficulties or produce a small spin-splitting or are volatile. Here, we propose to form vertical heterostructures by stacking two different but equally magnetized two-dimensional ferromagnetic materials. If an A-type antiferromagnetic ordering is satisfied, a fully compensated ferrimagnet can be formed. This vertical heterostructure approach is insensitive to lattice matching and stacking manner, thus being more conducive to experimental realization. Through first-principles calculations, we verify our proposal with several examples, focusing in particular on CrI3/CrGeTe3 heterojunction composed of experimentally synthesized CrI3 and CrGeTe3 monolayers. The calculations show that CrI3/CrGeTe3 is a fully-compensated ferrimagnet, with pronounced spin-splitting, and that tensile strain is more favorable for achieving fully-compensated ferrimagnetism. Our work provides an experimentally feasible strategy for realizing fully-compensated ferrimagnetism, thereby further advancing the development of this field.