2024/11/03 by Antarjami Sahoo, Swayang Priya Mahanta, Sahoo, Antarjami +3
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.2411.01662
openalex publication_date 2024/11/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The magnetic Gilbert damping and spin-orbital to charge interconversion phenomenon play vital role in controlling the modern spintronics device performances. Though the ferromagnets (FMs) and heavy metals (HMs) are considered to be the key components of the future spin-orbit torque magnetic random access memory (SOT-MRAM) devices, recently the integration of lighter materials with low intrinsic spin-orbit coupling (SOC) in spintronics devices has proven to be noteworthy. Here we demonstrate the efficient control of magnetization dynamics of β-W/CoFeB bilayer when capped by low SOC organic and inorganic layers. The C60 capping layer (CL) significantly enhances the magnetization relaxation process compared to the CuOx in β-W/CoFeB/CL heterostructures, while the static magnetic properties remain in-different irrespective of the nature of CL. Interestingly, the spin-orbital to charge conversion phenomenon is found to be enhanced for β-W/CoFeB/CuOx stacking compared to the β-W/CoFeB/C60 heterostructure, signifying the anti-correlation between the magnetic damping and spin-orbital to charge conversion. The results are interpreted by the interfacial phenomena, like the orbital Rashba effect, two-magnon scattering, and interfacial spin memory loss. Our detailed experimental investigations shed light on the importance of low SOC materials in effectively tuning the magnetization dynamics for the development of future power efficient spintronics devices.