2017/04/24 by Fangbo Xu, Xu, Fangbo, Alex Kutana +5
Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci #physics.app-ph
paper · pdf · doi:10.48550/arxiv.1704.07370
arxiv created 2017/04/24 · arxiv updated 2017/04/26
Recently demonstrated metal-semiconductor heterojunctions with few-atom thickness show their promise as 2D Schottky contacts for future integrated circuits and nanoelectronics. The theory for 3D Schottky contacts, however, fails on these low-dimensional systems. Here, we propose a new model that yields carrier distribution and potential profile across the 2D metal-semiconductor heterojunction under the equilibrium condition, based on the input from first-principle calculations. Our calculation also suggests that, at the same forward bias, the current density of a stack of 2D graphene-phosphorene Schottky diodes may be ten thousand times higher than that of a traditional 3D Schottky diode and offer less energy dissipation.