An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect

2025/12/09 by Mavredakis, Nikolaos, Pacheco-Sanchez, Anibal, Jimenez, David
Engineering · Materials Science · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Thermal properties of materials

paper · doi:10.48550/arxiv.2512.08388

openalex publication_date 2025/12/09 · openalex created_date 2025/12/11 · openalex updated_date 2026/07/28

Abstract

Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge density and Coulomb scattering coefficient deltaN LFN parameters are obtained after applying a parameter extraction methodology, adapted from conventional silicon technologies, to the linear ambipolar regions of GFETs. Appropriate adjustments are considered in the method according to GFETs physical characteristics. Afterwards, Hooge mobility as well as series resistance fluctuations LFN parameters can be extracted. The updated LFN model is validated with experimental data from various long and short-channel GFETs at an extended range of gate and drain bias conditions.

Citations

• Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
• A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors

Related

• Physics-Based Compact Modeling for the Drain Current Variability in Single-Layer Graphene FETs
• Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism
• Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor
• 1/f noise as a probe for investigating band structure in graphene
• Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors