2020/09/01 by Eldred Lee, Lee, Eldred, Michael R. James +9
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advanced X-ray and CT Imaging #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Radiation Detection and Scintillator Technologies
paper · pdf · doi:10.48550/arxiv.2009.00555
openalex publication_date 2020/09/01 · openalex created_date 2020/09/08 · openalex updated_date 2026/07/28
High-energy (>20keV) X-ray photon detection at high quantum yield, high spatial resolution and short response time has long been an important area of study in physics. Scintillation is a prevalent method but limited in various ways. Directly detecting high-energy X-ray photons has been a challenge to this day, mainly due to low photon-to-photoelectron conversion efficiencies. Commercially available state-of-the-art Si direct detection products such as the Si charge-coupled device (CCD) are inefficient for >10keV photons. Here, we present Monte Carlo simulation results and analyses to introduce a highly effective yet simple high-energy X-ray detection concept with significantly enhanced photon-to-electron conversion efficiencies composed of two layers: a top high-Z photon energy attenuator layer (PAL) and a bottom Si detector. We use the principle of photon energy down conversion, where high-energy X-ray photon energies are attenuated down to and below 10keV via inelastic scattering suitable for efficient photoelectric absorption by Si. Our Monte Carlo simulation results demonstrate that 10-30x increase in quantum yield can be achieved using PbTe PAL on Si, potentially advancing high-resolution, high-efficiency X-ray detection using PAL-enhanced Si CMOS image sensors.