2024/07/06 by Da Lin, Lin, Da, Jason Lynch +21 · 1 citation
Engineering · Physics and Astronomy · #Advanced Fiber Laser Technologies #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices #Semiconductor Lasers and Optical Devices
paper · pdf · doi:10.48550/arxiv.2407.05170
openalex publication_date 2024/07/06 · openalex created_date 2024/07/10 · openalex updated_date 2026/07/28
Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition metal dichalcogenides (TMDCs). We experimentally demonstrate an average total absorption in the visible range (450 nm - 700 nm) of > 70% using > 4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency (PCE) of 15.54% and a specific power > 300 W g-1 may be achieved in a photovoltaic cell based on this metamaterial absorber.