2021/11/17 by Mykola Telychko, Telychko, Mykola, Keian Noori +28
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.2111.09149
arxiv created 2021/11/17 · openalex publication_date 2021/11/17 · arxiv updated 2021/11/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report an atomically-precise integration of individual nitrogen (N) dopant as an in-plane artificial nucleus in a graphene device by atomic implantation to probe its gate-tunable quantum states and correlation effects. The N dopant creates the characteristic resonance state in the conduction band, revealing a giant carrier-dependent energetic renormalization up to 350 meV with respect to the Dirac point, accompanied by the observation of long-range screening effects. Joint density functional theory and tight-binding calculations with modified perturbation potential corroborate experimental findings and highlight the short-range character of N-induced perturbation.