2011/08/10 by Christian Ertler, Ertler, Christian, W. Pötz +2
Chemistry · Materials Science · Physics and Astronomy · #Advanced Physical and Chemical Molecular Interactions #Chemical and Physical Properties of Materials #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1108.2108
8 pages, 8 figures
arxiv created 2011/08/10 · openalex publication_date 2011/08/10 · arxiv updated 2011/08/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The magnetic state of the well is determined self-consistently by the tunneling current which controls the hole spin density and, hence, the degree of exchange splitting of the subbands inside the well. Prompted by recent experiments we compare model systems of increasing defect concentration (substitutional disorder) regarding their I-V curve, magnetic state, and spin polarization. We predict that, near resonance, the ferromagnetic order which may be present at zero bias in the GaMnAs well tends to be destroyed. Resonance peaks are found to be more sensitive to disorder than ferromagnetic ordering and spin polarization of the steady-state current.