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Strong Effect of Oxygen Partial Pressure on Electrical Properties of 0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 Thin Films

2015/03/30 by Qianru Lin, Danyang Wang, Sean Li · 5 citations
Materials Science · #Ferroelectric and Piezoelectric Materials #Multiferroics and related materials #Electronic and Structural Properties of Oxides

paper · doi:10.1111/jace.13560

Abstract

0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 ( BCZT ) epitaxial thin films were grown on SrRuO 3 ( SRO ) coated (001)‐oriented SrTiO 3 ( STO ) single crystal substrates by pulsed laser deposition under different oxygen partial pressures in the processing of deposition. The effects of oxygen partial pressure on structure, cation stoichiometry, surface morphology, leakage current behavior, ferroelectric, and piezoelectric properties were investigated. Both the lattice parameters and (Ba + Ca)/(Ti + Zr) cation ratio decrease with increasing oxygen partial pressure. The BCZT thin film with the ideal cation stoichiometry was obtained under 200 mTorr, giving rise to a remanent polarization P r = 14.5 μC/cm 2 and effective piezoelectric coefficient d 33 = 96 ± 5 pm/V.

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