2022/10/04 by A. Nadtochiy, Nadtochiy, A., A. Podolian +3
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.2210.07928
openalex publication_date 2022/10/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this work, we approximate the surface photovoltage (SPV) transients in nm-sized ZnO films by the equivalent RC circuit model. The SPV rises in time in time for about 90 mcs after the exciting light pulse at 275 nm is off at different pulse widths ranging from 1.2 to 12 mcs. The key to this observation is a considerable amount of defects in the films, which form a trap capacitance in the equivalent circuit. The photogeneration of nonequilibrium electrons and holes near the film surface is described by charging of a capacitance by the current source whereas the rate of their spatial separation is determined by a resistance. This resistance reflects an obstacle in the carrier movement while another capacitance determines the charge separation distance. The electron-hole recombination is account for a second resistance introduced into the equivalent circuit. The resulting modeled SPV transient allows to reproduce the observed experimental curve rather well.