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Efficient Photonic Integration of Diamond Color Centers and Thin-Film Lithium Niobate

2023/06/27 by Daniel Riedel, Riedel, Daniel, Hope Lee +24 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Advanced Fiber Laser Technologies #Applied Physics (physics.app-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Optics (physics.optics) #Photonic and Optical Devices #Quantum Physics (quant-ph)

paper · pdf · doi:10.48550/arxiv.2306.15207

openalex publication_date 2023/06/27 · openalex created_date 2023/06/29 · openalex updated_date 2026/07/28

Abstract

On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a 10-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.

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