2017/07/17 by Xinyu Zhao, Zhao, Xinyu, Xuedong Hu +1
Physics and Astronomy · Engineering · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Advancements in Semiconductor Devices and Circuit Design
paper · pdf · doi:10.48550/arxiv.1707.05217
In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines spin transport from multiple perspectives. We first study how a double dot potential may affect/accelerate spin relaxation. We calculate spin relaxation rate in a wide range of experimental parameters and focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We also study the non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-Stükelburg interference to achieve high-fidelity spin transport at a higher speed. Finally, we calculate the double-dot correction on the effective g-factor for the tunneling electron, and estimate the resulting phase error between different spin states. Our results should provide a useful guidance for future experiments on coherent electron spin transport.