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Cu-substituted Fe2P: An emerging candidates for magnetic RAM application

2019/02/13 by Enamullah Enamullah, Soumya S. Bhat, Enamullah +8
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Theoretical and Computational Physics #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1902.04876

arxiv created 2019/02/13 · openalex publication_date 2019/02/13 · arxiv updated 2019/02/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We propose that Cu-substituted Fe2P, (Fe1-xCux)2P (x∼ 0.16), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through Monte Carlo simulations, we demonstrate that this material can be used as ferromagnetic electrode in the magnetic tunnel junction (MTJ) of STT-MRAM due to its moderate perpendicular magnetic anisotropy (PMA), large tunnel magneto-resistance (TMR), good thermal stability and high ferromagnetic transition temperature. We point out that the simplicity in the synthesis, huge abundance, and non-toxicity make this material a very good candidate to replace the current MTJ materials for STT-MRAM such as FePt,~FeCo or FeCoB.

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