Extraction of absorption coefficients from GaN nanowires grown on opaque substrates

2014/02/28 by Rahul Jayaprakash, Debo Ajagunna, Jayaprakash, Rahul +10
Engineering · Materials Science · Physics and Astronomy · #Acoustic Wave Resonator Technologies #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Optics (physics.optics)

paper · pdf · doi:10.48550/arxiv.1402.7318

openalex publication_date 2014/02/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We demonstrate a new method to measure absorption coefficients in any family of nanowires, provided they are grown on a substrate having considerable difference in permittivity with the nanowire-air matrix. In the case of high crystal quality, strain-free GaN nanowires, grown on Si (111) substrates with a density of ~1010 cm-2, the extracted absorption coefficients do not exhibit any enhancement compared to bulk GaN values, unlike relevant claims in the literature. This may be attributed to the relatively small diameters, short heights, and high densities of our nanowire arrays.

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