Electron Paramagnetic Resonance of V_N-V_Ga complex in BGaN

2023/04/06 by Jakub Kierdaszuk, Ewelina. B. Możdżyńska, Kierdaszuk, Jakub +7
Chemistry · Engineering · Materials Science · #FOS: Physical sciences #Inorganic Chemistry and Materials #Magnetism in coordination complexes #Materials Science (cond-mat.mtrl-sci) #Molecular Junctions and Nanostructures

paper · pdf · doi:10.48550/arxiv.2304.03027

openalex publication_date 2023/04/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron (B_xGa_1-xN) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence of EPR intensities is compared with the results of High-Resolution Photoinduced Transient Spectroscopy (HRPITS). This allows to link particular traps with EPR signal. The activation energies of these traps are consistent with the theoretical position of the V_N-V_Ga complex. Thermal annihilation of the EPR signal with 30 meV activation energy corresponds to shallow donor ionization. The model explaining light-induced EPR signal involving redistribution of electrons between deep and shallow donors mediated by photoionization to the conduction band is proposed.

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