The mechanism of ion induced amorphization in Si

2008/11/05 by H. P. Lenka, Lenka, H. P., U. M. Bhatta +16
Engineering · Physics and Astronomy · #Ion-surface interactions and analysis #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.0811.0806

4 pages, 5 figures

arxiv created 2009/02/16 · arxiv updated 2009/12/01

Abstract

Some results on damage build up in, and amorphization of, Si, induced by 25-30 keV Al₅^-, Si₅^- and Cs^- ions, at room temperature, are reported. We show that at low energy, amorphization is a nucleation and growth process, based on the direct impact mechanism. With an Avrami exponent ∼ 1.6, the growth towards amorphization seems to be diffusion limited. A transition to a completely amorphized state is indicated at a dose exceeding 17 eV/atom, which is higher than 6-12 eV/atom as predicted by simulations. The observed higher threshold could be due to temperature effects although an underestimation of keV-energy recoils, in simulation, may not be ruled out.

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