Stochastic Nonlinear Dynamical Modelling of SRAM Bitcells in Retention Mode

2024/02/18 by Léopold Van Brandt, Van Brandt, Léopold, Denis Flandre +3
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Computational Engineering #FOS: Computer and information sciences #Finance #Hardware Architecture (cs.AR) #Integrated Circuits and Semiconductor Failure Analysis #VLSI and FPGA Design Techniques #and Science (cs.CE)

paper · pdf · doi:10.48550/arxiv.2402.11691

openalex publication_date 2024/02/18 · openalex created_date 2024/02/21 · openalex updated_date 2026/07/28

Abstract

SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical systems. From observation of variability-aware transient noise simulations, we provide an unidimensional model, fully characterizable by conventional deterministic SPICE simulations, insightfully explaining the mechanism of intrinsic noise-induced bit flips. The proposed model is exploited to, first, explain the reported inaccuracy of existing closed-form near-equilibrium formulas aimed at predicting the mean time to failure and, secondly, to propose a closer estimate attractive in terms of CPU time.

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