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Spin current as a response to external stress

2005/11/11 by Prashant Sharma, Sharma, Prashant
Computer Science · Earth and Planetary Sciences · Physics and Astronomy · #Earthquake Detection and Analysis #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Neural Networks and Applications #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0511270

5 pages and 2 figures in eps format

arxiv created 2005/11/11 · openalex publication_date 2005/11/11 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

It is theoretically predicted that a traveling shear wave will create a spin current in certain direct-gap (for example III-V compound) semiconductors with contributions from both the valence bands and the conduction band (for n-doped semiconductors). We show that this spin-current is a property of the Fermi-Dirac sea, and is controlled by a geometric phase accumulated by the strain-induced Rashba parameters in a cycle.

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