2013/02/04 by S. V. Savinov, Savinov, S. V., A. I. Oreshkin +3
Physics and Astronomy · #Advanced Chemical Physics Studies #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1302.0603
Submitted to Phys. Rev. B
openalex publication_date 2013/02/04 · arxiv created 2013/02/07 · arxiv updated 2013/02/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We have performed the numerical modeling of Ge(111)-(2x1) surface electronic properties in vicinity of P donor impurity atom located near the surface. We have found a notable increase of surface LDOS around surface dopant near the bottom of empty surface states band π^*, which we called split state due to its limited spatial extent and energetic position inside the band gap. We show, that despite of well established bulk donor impurity energy level position at the very bottom of conduction band, surface donor impurity on Ge(111)-(2x1) surface might produce energy level below Fermi energy, depending on impurity atom local environment. It was demonstrated, that impurity, located in subsurface atomic layers, is visible in STM experiment on Ge(111)-(2x1) surface. The quasi-1D character of impurity image, observed in STM experiments, is confirmed by our computer simulations with a note that a few π-bonded dimer rows may be affected by the presence of impurity atom.