2021/03/03 by Loreta A. Muscarella, Muscarella, Loreta A., Eline M. Hutter +11
Engineering · Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Optical properties and cooling technologies in crystalline materials #Perovskite Materials and Applications
paper · pdf · doi:10.48550/arxiv.2103.02332
openalex publication_date 2021/03/03 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
Hot-carrier cooling (HCC) in metal halide perovskites in the high-density\nregime is significantly slower compared to conventional semiconductors. This\neffect is commonly attributed to a hot-phonon bottleneck but the influence of\nthe lattice properties on the HCC behaviour is poorly understood. Using\npressure-dependent transient absorption spectroscopy (fs-TAS) we find that at\nan excitation density below Mott transition, pressure does not affect the HCC.\nOn the contrary, above Mott transition, HCC in methylammonium lead iodide\n(MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure.\nOur electron-phonon coupling calculations reveal about two times stronger\nelectron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, our\nexperiments reveal that pressure promotes faster HCC only above Mott\ntransition. Altogether, these findings suggest a change in the nature of\nexcited carriers in the high-density regime, providing insights on the\nelectronic behavior of devices operating at such high charge-carrier density.\n