Analytic view on N body interaction in electrostatic quantum gates and decoherence effects in tight-binding model

2019/12/03 by Pomorski, Krzysztof
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph)

paper · doi:10.48550/arxiv.1912.01205

Abstract

Analytical solutions describing quantum swap and Hadamard gate are given with the use of tight-binding approximation. Decoherence effects are described analytically for two interacting electrons confined by local potentials with use of tight-binding simplistic model and in Schroedinger formalism with omission of spin degree of freedom. The obtained results can be generalized for the case of N electrostatically interacting quantum bodies confined by local potentials (N-qubit) system representing any electrostatic quantum gate with N1/N-N1 inputs/outputs. The mathematical structure of system evolution with time is specified. Index Terms: quantum computation, entanglement, single-electron devices, position-dependent qubit, Q-Swap Gate, quantum CMOS

Related

• Analytical view on tunnable electrostatic quantum swap gate in tight-binding model
• Analytical view on N bodies interacting with quantum cavity in tight-binding model
• Fundamental description of Wannier qubits of any topology in semiconductor by analytical and numerical computations
• Electrostatically interacting Wannier qubits in curved space
• CMOS-Compatible Electrostatic SWAP Gate in Silicon Quantum Dots: Justification of Tight-Binding Model and Going Beyond