2014/03/25 by Shailendra K. Saxena, Saxena, Shailendra K., Vivek Kumar +16
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1403.6269
arxiv created 2014/03/25 · openalex publication_date 2014/03/25 · arxiv updated 2014/03/26 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.