2014/06/05 by T. Kirkpatrick, M. J. Burns, Kirkpatrick, T. +5
Engineering · Physics and Astronomy · #Nanowire Synthesis and Applications #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1406.2679
arxiv created 2015/05/27 · arxiv updated 2015/06/22
We present a model for simulating performance of 3D nano -coaxial and -hemispherical thin film solar cells. The material system considered in these simulations is hydrogenated amorphous silicon (a-Si:H), with solar cells fabricated in an n-i-p stacking architecture. Simulations for the performance of the planar a-Si:H device are compared against simulations performed using SCAPS-1D and found to be in close agreement. Electrical and optical properties of devices are discussed for the respective geometries. Maximum power point efficiencies are plotted as a function of i-layer thickness for insight into optimizing spatial parameters. Simulation results show that while geometrical changes in the energy band diagram impact charge carrier collection, a-Si:H solar cell performance is most significantly impacted by light absorption properties associated with nanoscopic arrays of non-planar structures. We compare our simulations to results of fabricated nanocoaxial a-Si:H solar cells and infer the mechanisms of enhanced absorption observed experimentally in such solar cells.