2025/09/08 by Alexander A. Zhivopistsev, Alexey M. Romshin, Zhivopistsev, A. A. +19
Materials Science · Physics and Astronomy · #Boron and Carbon Nanomaterials Research #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Force Microscopy Techniques and Applications #Quantum Physics (quant-ph)
paper · pdf · doi:10.48550/arxiv.2509.06500
openalex publication_date 2025/09/08 · openalex created_date 2025/10/11 · openalex updated_date 2026/07/28
The charge dynamics of silicon-vacancy (SiV) centers have been investigated for the first time in high-pressure high-temperature nanodiamonds (NDs) with varying concentrations of substitutional nitrogen (Ns). We demonstrate a controlled sixfold enhancement of SiV- photoluminescence (PL) under dual-color excitation, consisting of strong red (~660 nm) illumination combined with weak green (~530 nm) excitation. The measured dependencies of SiV- PL lifetime and intensity on excitation wavelength, together with the enhancement dependence on Ns concentration in the studied nanodiamonds, provide unambiguous evidence of the involvement of donor nitrogen in SiV-emission dynamics. Saturation curves and second-order PL intensity correlation measurements further indicate suppression of the population of the optically inactive SiV2- state upon the addition of green excitation. These results unlock a practical pathway toward engineering optically-controlled and scalable quantum emitters based on SiV-luminescent diamond nanoparticles.