Two-dimensional modelling of electron flow through a poorly conducting layer

2014/12/05 by Black, J. P., Breward, C. J. W., Howell, P. D.
#30C20 #35B40 #35J47 #65N35 #78A35 #Analysis of PDEs (math.AP) #FOS: Mathematics

paper · doi:10.48550/arxiv.1412.1986

Abstract

Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate and analyse a two-dimensional mathematical model for electron flow across a poorly conducting (glass) layer situated between silver electrodes, based on the drift-diffusion (Poisson-Nernst-Planck) equations. We devise and validate a novel spectral method to solve this model numerically. We find that the current short-circuits through thin glass layer regions. This enables us to determine asymptotic expressions for the average current density for two different canonical glass layer profiles.

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