2024/12/19 by Julian A. Steele, Patrick J. Strohbeen, Steele, Julian A. +27 · 1 voice · 1 citation
Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.2412.15421
arxiv published 2024/12/19 · arxiv updated 2025/11/14
Doping-induced superconductivity in group IV elements may enable quantum functionalities in material systems accessible with well-established semiconductor technologies. Non-equilibrium hyperdoping of group III atoms into C, Si, or Ge can yield superconductivity; however, its origin is obscured by structural disorder and dopant clustering. Here, we report the epitaxial growth of hyperdoped Ga:Ge films and trilayer heterostructures by molecular beam epitaxy with extreme hole concentrations (n_\textuph = 4.15 × 1021~cm-3, ~17.9% Ga substitution) that yield superconductivity with a critical temperature of T_\textupc = 3.5~K and an out-of-plane critical field of 1~T at 270~mK. Synchrotron-based X-ray absorption and scattering methods reveal that Ga dopants are substitutionally incorporated within the Ge lattice, introducing a tetragonal distortion to the crystal unit cell. Our findings, corroborated by first-principles calculations, suggest that the structural order of Ga dopants creates a narrow band for the emergence of superconductivity in Ge, establishing hyperdoped Ga:Ge as a low-disorder, epitaxial superconductor-semiconductor platform.