2024/01/15 by Dong-Ho Shin, Jun Yang, Shin, Dong-Ho +23
Engineering · Materials Science · #2D Materials and Applications #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Gas Sensing Nanomaterials and Sensors #Materials Science (cond-mat.mtrl-sci)
paper · pdf · doi:10.48550/arxiv.2401.07607
openalex publication_date 2024/01/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
SnS2 stands out as a highly promising two-dimensional material with significant potential for applications in the field of electronics. Numerous attempts have been undertaken to modulate the physical properties of SnS2 by doping with various metal ions. Here, we deposited a series of Sb-doped SnS2 via atomic layer deposition (ALD) super-cycle process and compared its crystallinity, composition, and optical properties to those of pristine SnS2. We found that the increase in the concentration of Sb is accompanied by a gradual reduction in the Sn and S binding energies. The work function is increased upon Sb doping from 4.32 eV (SnS2) to 4.75 eV (Sb-doped SnS2 with 9:1 ratio). When integrated into photodetectors, the Sb-doped SnS2 showed improved performances, demonstrating increased peak photoresponsivity values from 19.5 A/W to 27.8 A/W at 405 nm, accompanied by an improvement in response speed. These results offer valuable insights into next-generation optoelectronic applications based on SnS2.