Response of a spin valve to a spin battery

2016/06/21 by Khuôn-Viêt Pham, Pham, Khuôn-Viêt
Engineering · Physics and Astronomy · #Advanced Memory and Neural Computing #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.1606.06514

openalex publication_date 2016/06/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery, and are therefore perfect spin transistors. While a spin valve driven by a charge battery displays the usual GMR (Giant Magneto-Resistance), this means that a pure spin current or pure spin accumulation can generate an infinite magnetoresistance (IMR). Magnetic tunnel junctions as well as CPP (current perpendicular to plane) or CIP (current in plane) metallic trilayers are discussed.

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