2025/05/08 by Zhi Yan, Jianhua Xiao, Yan, Zhi +7
Materials Science · Physics and Astronomy · #2D Materials and Applications #Applied Physics (physics.app-ph) #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Quantum Physics (quant-ph) #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2505.04878
openalex publication_date 2025/05/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with h-BN barrier layer. First-principles calculations reveal that intercalation not only stabilizes uniform atomic dispersion via steric hindrance but also induces robust ferromagnetism in graphene. Manganese- and vanadium-intercalated systems (Mn-Gr and V-Gr) exhibit exceptional spintronic performance, with tunneling magnetoresistance (TMR) showing a pronounced odd-even oscillation as a function of barrier thickness. A giant TMR of 4.35 × 108 % is achieved in the Mn-Gr system with a monolayer barrier h -BN (n=1), while V-Gr reaches a maximum TMR of 1.86 × 105 % for a trilayer barrier (n=3). Moreover, biaxial strain further enhances the TMR to 109 % and 107 % in Mn-Gr and V-Gr systems, respectively. The devices also exhibit perfect spin filtering and pronounced negative differential resistance, offering new opportunities for high-performance spintronic and memory applications based on 2D van der Waals heterostructures.