2023/11/17 by Shijie Xu, Yan Huang, Xu, Shijie +33
Engineering · Materials Science · Physics and Astronomy · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films
paper · pdf · doi:10.48550/arxiv.2311.10288
openalex publication_date 2023/11/17 · openalex created_date 2023/11/21 · openalex updated_date 2026/07/28
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2.