On the Origin of Carrier Loss in Mg-Doped N-Polar GaN

2025/10/05 by Kamiyama, Masahiro, Rathkanthiwar, Shashwat, Quiñones-García, Cristyan +6
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2510.04381

Abstract

The neutral (V_N-3Mg_Ga)⁰ complex was found to be the primary compensator in Mg-doped, N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ~10¹⁹ cm^-3. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration (N_A), suggesting that a significant fraction of Mg atoms incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of (V_N-3Mg_Ga)⁰ complexes as the primary cause for the observed carrier loss.

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