2009/01/23 by J. Berney, Berney, J., M. T. Portella-Oberli +3
Chemical Engineering · Engineering · Physics and Astronomy · #Analytical Chemistry and Sensors #Laser Design and Applications #Spectroscopy and Quantum Chemical Studies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0901.3645
arxiv created 2009/01/23 · arxiv updated 2009/12/01
A theoretical investigation of the trion formation process from free carriers in a single GaAs/Al1-xGaxAs quantum well is presented. The mechanism for the formation process is provided by the interaction of the electrons and holes with phonons. The contributions from both the acoustic and optical phonons are considered. The dependence of both bi-molecular and tri-molecular formation rates on temperature is calculated. We demonstrate that they are equivalent for negatively and positively charged excitons.