2020/07/10 by Gennady I. Zebrev, Zebrev, G. I., D. S. Malich +1
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2007.05332
openalex publication_date 2020/07/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We propose a general physics-based approach for an accurate analytical calculation of the channel charge density in field-effect transistors as functions of the external gate biases. This approach is based on a consistent consideration of basic electrostatic equation as a balance of electric and chemical potentials which allows us to obtain in a unified way the explicit analytic expressions continuously de-scribing the subthreshold and above threshold regions in nanosheet (symmetric and asymmetric) and nanowire FETs. Two conceptually different definitions of phenomenological threshold voltage are consistently introduced and discussed.