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Enhanced piezoelectricity and electronic band structure transition assisted by atomic shift in MoS2 monolayer

2017/08/14 by Sheng Yu, Yu, Sheng, Quinton Rice +7
Engineering · Materials Science · #2D Materials and Applications #Acoustic Wave Resonator Technologies #Advanced Sensor and Energy Harvesting Materials #Applied Physics (physics.app-ph) #FOS: Physical sciences

paper · pdf · doi:10.48550/arxiv.1708.04353

openalex publication_date 2017/08/14 · openalex created_date 2017/08/31 · openalex updated_date 2026/07/28

Abstract

Piezoelectricity appears in the inversion asymmetric crystal that converts mechanical deformational force to electricity. Two-dimensional transition metal dichalcolgenide (TMDC) monolayers exhibit the piezoelectric effect due to the inversion asymmetry. The intrinsic piezoelectric coefficient (e11) of MoS2 is ~298 pC/m. For the single atomic shift of Mo of 20% along the armchair direction, the piezoelectric coefficient (e11) of MoS2 with 5x5 unit cells was enhanced up to 18%, and significantly modified the band structure. The single atomic shift in the MoS2 monolayer also induced new energy levels inside the forbidden bandgap. The defect-induced energy levels for a Mo atom shift along the armchair direction are relatively deeper than the energy levels for a S atom shift along the same direction. It indicates that the piezoelectricity and band structure of MoS2 can be engineered by a single atomic shift in the monolayer with multi unit cells for mechano-electrical applications.

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