2025/10/11 by Ma, Beining, Qi, Jianyuan, Shen, Xinghai
#Chemical Physics (physics.chem-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)
paper · doi:10.48550/arxiv.2510.09998
Graphdiyne (GDY) is recognized as a compelling candidate for the fabrication of next-generation high-speed low-energy electronic devices due to its inherent p-type semiconductor characteristics. However, the development of GDY for applications in field-effect transistors (FETs), complementary metal-oxide-semiconductor (CMOS), and logic devices remains constrained by the relatively low carrier mobility reported in current experimental studies. Herein, the synthesis of layer-controlled hydrogen-substituted graphdiyne (HsGDY) films directly on silicon substrates under a supercritical CO2 atmosphere is reported, along with the fabrication of these films into HsGDY-based FETs. The transfer-free growth strategy eliminates performance degradation caused by post-synthesis transfer processes. The resulting HsGDY FETs exhibit a remarkable hole mobility of up to 3800 cm2 V-1 s-1 at room-temperature, which is an order of magnitude higher than that of most p-type semiconductors. The synthesis of transfer-free HsGDY wafers provides a new strategy for resolving the carrier mobility mismatch between p-channel and n-channel two-dimensional metal-oxide-semiconductor devices.