2025/12/05 by Shazon, Md Nahid Haque, Kumar, Piyush, Liu, Luqiao +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena
paper · doi:10.48550/arxiv.2512.06215
openalex publication_date 2025/12/05 · openalex created_date 2025/12/10 · openalex updated_date 2026/07/28
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little to no improvement over spin-transfer-torque (STT) MRAM in terms of write energy. However, emerging SOT materials that provide out-of-plane torques with efficiencies as small as 0.1 can result in significant improvements in the write energy for such 2-terminal devices, especially when the magnet lateral dimensions are scaled down to 30 or 20 nm. Additionally, a novel 2T-SOT MRAM device is proposed that can increase the path electrons pass through the SOT layer; hence, increasing the generated spin current and the energy efficiency of the device. Our benchmarking results indicate that an out-of-plane SOT efficiency of 0.051 for 20nm wide devices can result in write energies approaching SRAM at the 7nm technology node.