Billion-Fold Enhancement of Room-Temperature Ionic Conductivity in h-RMnO3/YSZ Heterostructures via Electric-Field-Assisted Oxygen Deficiency Engineering

2024/11/09 by Detian Yang, Yang, Detian, Yaohua Liu +7
Engineering · Materials Science · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2411.06220

openalex publication_date 2024/11/09 · openalex created_date 2024/11/15 · openalex updated_date 2026/07/28

Abstract

Oxide heterostructures provide versatile platforms for manipulating electronic and ionic conductive states. In this study, we demonstrate a remarkable billion-fold enhancement in room-temperature ionic conductivity within h-RMnO3/YSZ heterostructures, achieved through electric-field-assisted oxygen deficiency engineering. This enhancement is closely linked to substantial oxygen depletion in YSZ and is tunable by varying the thickness of the h-RMnO3 film layer and the applied voltage bias. Our findings underscore the critical importance of interfacial design and vacancy control in enhancing ionic transport capabilities, paving the way for advanced applications in low-temperature energy harvesting, storage, and conversion technologies.

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