2024/10/26 by Kaarour, Hadj Barkat, Soudini, Belabbas, Abid, Hamza
#Band-gap #Perovskite light emitting diode #SRH recombination #Silvaco-Atla #Trap density of state
paper · doi:10.57647/j.jtap.2024.1805.69
The purpose of this paper is to analyse and optimize CH3NH3PbBr3-based perovskite lightemitting diodes (PeLEDs) using Silvaco-Atlas, with the aim of improving the optical output of these devices by varying the thickness of the active perovskite layer. The performance of the PeLEDs was thoroughly investigated, and the results indicate that the most significant improvement in luminescence occurs when the thickness of the perovskite layer is between 5 and 20 nm. In addition, the paper presents an analysis of the structural and optical properties of AB(Br1−xClx)3, a perovskite semiconductor tunable with respect to the band gap energy, where A represents CH3NH+3 , B represents Pb+2, and x ranges from 0 to 1. Furthermore, the study focuses on the successful incorporation of these materials into green and blue-emitting perovskite semiconductors that operate efficiently at room temperature, and analyses their applications in LEDs by examining the Full Width at Half Maximum (FWHM) values and comparing them with previous experimental studies.