Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode

2023/11/07 by Gsponer, Andreas, Knopf, Matthias, Gaggl, Philipp +3 · 2 citations
#FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det)

paper · doi:10.48550/arxiv.2311.03902

Abstract

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy ε_i published in the literature vary significantly. This work presents an experimental determination of ε_i using 50 μm 4H-SiC p-n diodes designed for particle detection in high-energy physics. The detector response was measured for α particles between 4.2 MeV and 5.6 MeV for 4H-SiC and a silicon reference device. Different α energies were obtained by using multiple nuclides and varying the effective air gap between the α source and the detector. The energy deposited in the detectors was determined using a Monte Carlo simulation, taking into account the device cross-sections. A linear fit of the detector response to the deposited energy yields ε_i = (7.83 ± 0.02) eV, which agrees well with the most recent literature. For the 4H-SiC detectors, a linewidth of 28 keV FWHM was achieved, corresponding to an energy resolution of 0.5%.

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