2015/07/03 by S. Bugiel, Roma Dasgupta, Bugiel, Szymon +13
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #Particle Detector Development and Performance #Advancements in Semiconductor Devices and Circuit Design
paper · pdf · doi:10.48550/arxiv.1507.00864
This paper presents the design of a new monolithic Silicon-On-Insulator pixel sensor in 200~nm SOI CMOS technology. The main application of the proposed pixel detector is the spectroscopy, but it can also be used for the minimum ionizing particle (MIP) tracking in particle physics experiments. For this reason few different versions of pixel cells are developed: a source-follower based pixel for tracking, a low noise pixel with preamplifier for spectroscopy, and a self-triggering pixel for time and amplitude measurements. In addition the design of a Successive Approximation Register Analog-to-Digital Converter (SAR ADC) is also presented. A 10-bit SAR ADC is developed for spectroscopic measurements and a lower resolution 6-bit SAR ADC is integrated in the pixel matrix as a column ADC, for tracking applications.