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Enhancement of perpendicular magnetic anisotropy and its electric field-induced change through interface engineering in Cr/Fe/MgO

2016/12/31 by A. Kozioł‐Rachwał, Takayuki Nozaki, Kozioł-Rachwał, A. +9 · 1 citation
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties of Alloys #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.1701.00048

openalex publication_date 2016/12/31 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

Recently, perpendicular magnetic anisotropy (PMA) and its voltage control (VC) was demonstrated for Cr/Fe/MgO (Physical Review Applied 5, 044006 (2016)). In this study, we shed a light on the origin of large voltage-induced anisotropy change in Cr/Fe/MgO. Analysis of the chemical structure of Cr/Fe/MgO revealed the existence of Cr atoms in the proximity of the Fe/MgO interface, which can affect both magnetic anisotropy (MA) and its VC. We showed that PMA and its VC can be enhanced by controlled Cr doping at the Fe/MgO interface. For Cr/Fe (5.9 Å)/Cr (0.7 Å)/MgO with an effective PMA of 0.8 MJ/m3, a maximum value of the voltage-controlled magnetic anisotropy (VCMA) effect of 370 fJ/Vm was demonstrated.

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