High Mobility Two-Dimensional Electron Gas at the BaSnO₃/SrNbO₃ Interface

2022/06/24 by Sharad Mahatara, Suresh Thapa, Mahatara, Sharad +7 · 1 citation
Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci)

paper · pdf · doi:10.48550/arxiv.2206.12028

openalex publication_date 2022/06/24 · openalex created_date 2022/06/29 · openalex updated_date 2026/07/28

Abstract

Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO₃ (BSO). ACBN0 computations for BSO/SrNbO₃ (SNO) interfaces show Nb-4d electron injection into extended Sn-5s electronic states. The conduction band minimum consists of Sn-5s states ~1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of ~10²¹ cm^-3. Experimental studies of analogous SNO/BSO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. \textit In situ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of ~4 × 10²¹ cm^-3. The consistency of theory and experiment shows that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs.

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