1999/10/01 by S. Sedlmaier, Sedlmaier, S., M. Stopa +7
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/9910002
4 pages, revtex, 4 figs
arxiv created 1999/10/01 · openalex publication_date 1999/10/01 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We measure the photoluminescence spectra for an array of modulation doped, T-shaped quantum wires as a function of the 1d density ne which is modulated with a surface gate. We present self-consistent electronic structure calculations for this device which show a bandgap renormalization which, when corrected for excitonic energy and its screening, are largely insensitive to ne and which are in quantitatively excellent agreement with the data. The calculation (cf. cond-mat/9908349) shows the importance of including orthogonality between the screening electrons and the electron(s) bound to the hole. The calculations show that electron and hole remain bound up to 3 x 106 cm-1 and that therefore the stability of the exciton far exceeds the conservative Mott criterion.