2012/10/08 by G. A. Ovsyannikov, Ovsyannikov, G. A., V. V. Demidov +10
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.1210.2261
26 pages, 10 figures
arxiv created 2012/10/08 · openalex publication_date 2012/10/08 · arxiv updated 2012/10/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Transport and magnetic properties of LSMO manganite thin films and bicrystal junctions were investigated. Manganite films were epitaxially grown on STO, LAO, NGO and LSAT substrates and their magnetic anisotropy were determined by two techniques of magnetic resonance spectroscopy. Compare with cubic substrates a small (about 0.3 persentage), the anisotropy of the orthorhombic NGO substrate leads to a uniaxial anisotropy of the magnetic properties of the films in the plane of the substrate. Samples with different tilt of crystallographic basal planes of manganite as well as bicrystal junctions with rotation of the crystallographic axes (RB - junction) and with tilting of basal planes (TB - junction) were investigated. It was found that on vicinal NGO substrates the value of magnetic anisotropy could be varied by changing the substrate inclination angle from 0 to 25 degrees. Measurement of magnetic anisotropy of manganite bicrystal junction demonstrated the presence of two ferromagnetically ordered spin subsystems for both types of bicrystal boundaries RB and TB. The magnitude of the magnetoresistance for TB - junctions increased with decreasing temperature and with the misorientation angle even misorientation of easy axes in the parts of junction does not change. Analysis of the voltage dependencies of bicrystal junction conductivity show that the low value of the magnetoresistance for the LSMO bicrystal junctions can be caused by two scattering mechanisms with the spin- flip of spin - polarized carriers due to the strong electron - electron interactions in a disordered layer at the bicrystal boundary at low temperatures and the spin-flip by anti ferromagnetic magnons at high temperatures.